Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Takakuwa, Yuji*; Ishizuka, Shinji*; Yoshigoe, Akitaka; Teraoka, Yuden; Yamauchi, Yasuhiro*; Mizuno, Yoshiyuki*; Tonda, Hideki*; Homma, Teiichi*
Applied Surface Science, 216(1-4), p.395 - 401, 2003/06
Times Cited Count：19 Percentile：65.52(Chemistry, Physical)Real-time in-situ observation using photoelectron spectroscopy for elementary processes of Ti(0001) oxidation by O
molecules has been performed at the surface reaction analysis apparatus installed at the BL23SU in the SPring-8. And the real-time observation has been also performed by RHEED-AES methods at Tohoku University. The partial pressure region of oxygen was from 2x10
Torr to 8x10
Torr. The surface temperature was 473 K and 673 K. The variation from clean Ti surface toward TiO was comfirmed by observation of Ti-2p and O-1s photoelectron spectra. Reflected electron intensity and O-KLL Auger electron intensity oscillated in the RHEED-AES measurements. These facts revealed that the surface morphological change of the oxidized Ti(0001) surface was associated not only with a disappearance of the surface metallic layer but also with a change of the oxidation state.
/Si(001) system observed by SiO mass spectrometry and synchrotron radiation photoemission spectroscopyTeraoka, Yuden; Moritani, Kosuke; Yoshigoe, Akitaka
Applied Surface Science, 216(1-4), p.8 - 14, 2003/06
Times Cited Count：6 Percentile：35.59(Chemistry, Physical)The experiments concerning the oxidation of Si(001) were performed at the surface reaction analysis apparatus, installed at the beamline BL23SU in the SPring-8. The SiO desorb remarkably at surface temperature of 1000 K. The desorption yield increased with increasing the incident energy of O. On the other hand, the desorption yield increased with decreasing the incident energy in the temperature region lower than 1000 K. Oxygen uptake curves observed by O-1s photoemission measurements corresponded to the SiO desorption features. These facts reveal that the passive oxidation coexists with the SiO desorption in the temperature region from 900 K to 1000 K.
gas on Si(0 0 1) surface by means of synchrotron radiation Si-2p photoemission spectroscopyYoshigoe, Akitaka; Moritani, Kosuke; Teraoka, Yuden
Applied Surface Science, 216(1-4), p.388 - 394, 2003/06
Times Cited Count：9 Percentile：45.93(Chemistry, Physical)It is well known that the initial Si(0 0 1) oxidation by O gas is an important reaction system because it is usually used to form gate-oxide films on MOSFET. With decreasing the size of ULSI, it is necessary to control the surface reaction with atomic scales. In this study, we report 
observation of thermal oxidation using O gas on Si(0 0 1) surface by means of synchrotron radiation photoemission spectroscopy at the soft x-ray beamline, BL23SU, in the SPring-8. We clarified the chemisorption processes of O on Si(0 0 1) surface over 773K regions at the initial oxidation stages from the results of Si2p core-level shifts. The fundamental understanding of surface reaction is expected to contribute the development of the future nanotechnology.
